APT50M75JLLU2 Datasheet, PDF (2/6 Pages) Advanced Power Technology – Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

DYNAMIC CHARACTERISTICS
APT50M75JLLU2
Symbol Characteristic
Test Conditions
MIN TYP MAX
C_{iss Input Capacitance}
C_{oss Output Capacitance}
V_GS = 0V
V_DS = 25V
5800
1200
C_{rss Reverse Transfer Capacitance}
f = 1 MHz
90
Q_g
L ^Q_gs
A _Qgd
IC _td(on)
HN ^tr
C t_d(off)
TE _ION ^tf
Total Gate Charge ³
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V_GS = 10V
V_DD = 0.5 V_DSS
I_D = I_D[Cont.] @ 25°C
V_GS = 15V
V_DD = 0.5 V_DSS
I_D = I_D[Cont.] @ 25°C
R_G = 0.6W
CE AT _{SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS}
VAN ^{RM Symbol}
D ^{O IS}
A _INF I_SM
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current ¹ (Body Diode)
145
38
66
17
14
38
5
MIN TYP MAX
51
204
V_SD
Diode Forward Voltage ² (V_GS = 0V, I_S = -I_D[Cont.])
1.3
t _rr
Reverse Recovery Time (I_S = -I_D[Cont.], dl_S/dt = 100A/µs)
620
Q _rr Reverse Recovery Charge (I_S = -I_D[Cont.], dl_S/dt = 100A/µs)
14.7
dv_{/dt Peak Diode Recovery} dv_/dt 5
8
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
V/ns
THERMAL CHARACTERISTICS
Symbol
R_qJC
R_qJA
Characteristic
Junction to Case
Junction to Ambient
MIN TYP MAX UNIT
0.27
40
°C/W
1 _{Repetitive Rating: Pulse width limited by maximum junction}
3 _{See MIL-STD-750 Method 3471}
temperature.
4 _{Starting Tj = +25°C, L = 1.92mH, RG = 25W, Peak IL = 51A}
2 _{Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%}
5 dv_{/dt numbers reflect the limitations of the test circuit rather than the}
device itself. I_S £ -I_D[Cont.] ^di/_dt £ 700A/µs V_R £ V_DSS T_J £ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.3
D=0.5
0.1
0.2
0.05
0.1
0.05
0.01
0.02
0.005
0.01
SINGLE PULSE
Note:
t1
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
0.001
10^-5
10^-4
10^-3
10^-2
10^-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION