APT50M75JLLU2 Datasheet, PDF (3/6 Pages) Advanced Power Technology – Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

APT50M75JLLU2
Diode Specifications Section
MAXIMUM RATINGS (UltraFast Recovery Diode)
All Ratings: T_C = 25°C unless otherwise specified.
Symbol Characteristic / Test Conditions
APT50M75JLLU2
UNIT
V_R
Maximum D.C. Reverse Voltage
V_RRM
L ^VRWM
A _IF(AV)
NIC ^IF^(RMS)
H _IFSM
EC ^N T_J,T_STG
T _{IO TL}
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T_C = 80°C, Duty Cycle = 0.5)
RMS Forward Current
Non-Repetitive Forward Surge Current (T_J = 45°C, 8.3mS)
Operating and StorageTemperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
NCE ^{AT STATIC ELECTRICAL CHARACTERISTICS}
VA ^{RM Symbol Characteristic / Test Conditions}
AD _{INFO VF}
Maximum Forward Voltage
I_F = 30A
I_F = 60A
600
30
60
320
-55 to 150
300
MIN TYP MAX
1.8
1.5
I_F = 30A, T_J = 150°C
1.6
Maximum Reverse Leakage Current
I_RM
C_T
Junction Capacitance, V_R = 200V
V_R = V_R Rated
V_R = V_R Rated, T_J = 125°C
250
500
40
Volts
Amps
°C
UNIT
Volts
µA
pF