APT50M75JLLU2 Datasheet, PDF (4/6 Pages) Advanced Power Technology – Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

APT50M75JLLU2
DYNAMIC CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX
t_rr1
Reverse Recovery Time, I_F = 1.0A, di_F/dt = -15A/µS, V_R = 30V, T_J = 25°C
50
65
t_rr2
t_rr3
t_fr1
t_fr2
I_RRM1
I_RRM2
Q_rr1
Q_rr2
V_fr1
V_fr2
diM / dt
Reverse Recovery Time
I_F = 30A, di_F/dt = -240A/µS, V_R = 350V
AL ^{Forward Recovery Time}
IC _{IF = 30A, diF/dt = 240A/µS, VR = 350V}
HN ^{Reverse Recovery Current}
EC ^{N IF = 30A, diF/dt = -240A/µS, VR = 350V}
T _{IO Recovery Charge}
CE AT ^IF ^{= 30A, di}F^{/dt = -240A/µS, V}R ^{= 350V}
N _{M Forward Recovery Voltage}
DVA ^{OR IF = 30A, diF/dt = 240A/µS, VR = 350V}
A _INF ^{Rate of Fall of Recovery Current}
T_J = 25°C
50
T_J = 100°C
80
T_J = 25°C
155
T_J = 100°C
155
T_J = 25°C
4
T_J = 100°C
7.5
T_J = 25°C
100
T_J = 100°C
300
T_J = 25°C
5
T_J = 100°C
5
T_J = 25°C
400
10
15
I_F = 30A, di_F/dt = -240A/µS, V_R = 350V (See Figure 10)
T_J = 100°C
200
UNIT
nS
Amps
nC
Volts
A/µS
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
R_qJC
R_qJA
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
W_{T Package Weight}
MIN TYP MAX UNIT
0.90
20
°C/W
1.06
oz.
30
gm.
2.0
1.0
D=0.5
0.5
0.2
0.1
0.1
0.05
0.05
0.01
0.00510_-5
0.02
0.01
SINGLE PULSE
Note:
t1
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 14, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION