BUF04 Datasheet, PDF (4/16 Pages) Analog Devices – Closed-Loop High Speed Buffer

BUF04
WAFER TEST LIMITS _{(@ VS = ؎15.0 V, TA = +25؇C unless otherwise noted)}
Parameter
Symbol
Conditions
Limit
Units
Offset Voltage
Input Bias Current
Power Supply Rejection Ratio
Output Voltage Range
Supply Current
Gain
V_OS
V_OS
I_B
PSRR
V_O
I_SY
A_VCL
V_S = ± 15 V
V_S = ± 5 V
V_CM = 0 V
V = ± 4.5 V to ± 18 V
R_L = 150 Ω
V_O = 0 V, R_L = 2 kΩ
V_O = ± 10 V, R_L = 2 kΩ
1
2
5
76
± 10.5
8.5
1 ± 0.005
mV max
mV max
µA max
dB
V min
mA max
V/V
NOTE
Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard
product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
ABSOLUTE MAXIMUM RATINGS¹
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 18 V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 18 V
Maximum Power Dissipation . . . . . . . . . . . . . . . See Figure 16
Storage Temperature Range
Z Package . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +175°C
P, S Package . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Operating Temperature Range
BUF04Z . . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to +125°C
BUF04S, P . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C
Junction Temperature Range
Z Package . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
P, S Package . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering 60 sec) . . . . . . . . +300°C
DICE CHARACTERISTICS
Package Type
θ_JA2
8-Pin Cerdip (Z)
148
8-Pin Plastic DIP (P)
103
8-Pin SOIC (S)
158
θ_JC
Units
16
°C/W
43
°C/W
43
°C/W
NOTES
1_{Absolute maximum ratings apply to both DICE and packaged parts, unless}
otherwise noted.
2_{θJA is specified for the worst case conditions, i.e., θJA is specified for device in socket}
for cerdip, P-DIP, and LCC packages; θ_JA is specified for device soldered in circuit
board for SOIC package.
BUF04 Die Size 0.075 x 0.064 inch, 5,280 Sq. Mils
Substrate (Die Backside) Is Connected to V+
Transistor Count 45.
ORDERING GUIDE
Model
BUF04AZ/883
BUF04GP
BUF04GS
BUF04GBC
Temperature
Range
–55°C to +125°C
–40°C to +85°C
–40°C to +85°C
+25°C
Package
Description
Cerdip
Plastic DIP
SO
DICE
Package
Option
Q-8
N-8
SO-8
DICE
–4–
REV. 0