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BUF04 Datasheet, PDF (3/16 Pages) Analog Devices – Closed-Loop High Speed Buffer
BUF04
ELECTRICAL CHARACTERISTICS (@ VS = ؎5.0 V, TA = +25؇C unless otherwise noted)
Parameter
Symbol Conditions
Min Typ Max
INPUT CHARACTERISTICS
Offset Voltage
Input Bias Current
Input Voltage Range
Offset Voltage Drift
Offset Null Range
VOS
IB
VCM
∆VOS/∆T
–40°C ≤ TA ≤ +85°C
VCM = 0 V
–40°C ≤ TA ≤ +85°C
0.8 2.0
1.0 4
0.15 5
1.6 10
± 3.0
30
± 25
OUTPUT CHARACTERISTICS
Output Voltage Swing
VO
Output Current - Continuous
Peak Output Current
IOUT
IOUTP
RL = 150 Ω,
–40°C ≤ TA ≤ +85°C
RL = 2 kΩ,
–40°C ≤ TA ≤ +85°C
Note 2
± 3.0
± 2.75
± 3.0
± 3.0
± 40
± 3.00
± 3.6
± 3.35
± 75
TRANSFER CHARACTERISTICS
Gain
Gain Linearity
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current
AVCL
NL
PSRR
ISY
DYNAMIC PERFORMANCE
Slew Rate
SR
Bandwidth
BW
Bandwidth
BW
Bandwidth
BW
Differential Phase
Differential Gain
RL = 2 kΩ,
–40°C ≤ TA ≤ +85°C
RL = 1 kΩ
0.995 0.9977 1.005
0.995
1.005
0.005
VS = ± 4.5 V to ± 18 V
–40°C ≤ TA ≤ +85°C
VO = 0 V, RL = ∞
–40°C ≤ TA ≤ +85°C
76
93
76
93
6.60 8
6.70 8
RL = 2 kΩ, CL = 70 pF
–3 dB, CL = 20 pF, RL = ∞
–3 dB, CL = 20 pF, RL = 1 kΩ
–3 dB, CL = 20 pF, RL = 150 Ω
f = 3.58 MHz, RL = 150 Ω
f = 4.43 MHz, RL = 150 Ω
f = 3.58 MHz, RL = 150 Ω
f = 4.43 MHz, RL = 150 Ω
2000
100
100
100
0.13
0.15
0.04
0.06
NOISE PERFORMANCE
Voltage Noise Density
en
f = 1 kHz
4
Current Noise Density
in
f = 1 kHz
2
NOTE
1Long term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 °C, with an LTPD of 1.3.
Specifications subject to change without notice.
Units
mV
mV
µA
µA
V
µV/°C
mV
V
V
V
V
mA
mA
V/V
V/V
%
dB
dB
mA
mA
V/µs
MHz
MHz
MHz
Degrees
Degrees
%
%
nV/√Hz
pA/√Hz
REV. 0
–3–