BUF04 Datasheet, PDF (2/16 Pages) Analog Devices – Closed-Loop High Speed Buffer

BUF04–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (@ V_S = ؎15.0 V, T_A = +25؇C unless otherwise noted)
Parameter
Symbol Conditions
Min Typ Max
INPUT CHARACTERISTICS
Offset Voltage
Input Bias Current
Input Voltage Range
Offset Voltage Drift
Offset Null Range
V_OS
I_B
V_CM
∆V_OS/∆T
–40°C ≤ T_A ≤ +85°C
V_CM = 0
–40°C ≤ T_A ≤ +85°C
0.3 1
1.3 4
0.7 5
2.2 10
± 13
30
± 25
OUTPUT CHARACTERISTICS
Output Voltage Swing
V_O
Output Current – Continuous
Peak Output Current
TRANSFER CHARACTERISTICS
Gain
Gain Linearity
I_OUT
I_OUTP
A_VCL
NL
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current
DYNAMIC PERFORMANCE
Slew Rate
Bandwidth
Bandwidth
Bandwidth
Settling Time
Differential Phase
Differential Gain
Input Capacitance
PSRR
I_SY
SR
BW
BW
BW
R_L = 150 Ω,
–40°C ≤ T_A ≤ +85°C
R_L = 2 kΩ,
–40°C ≤ T_A ≤ +85°C
Note 2
± 10.5
± 10
± 13
± 13
± 50
± 11.1
± 11
± 13.5
± 13.15
± 65
± 80
R_L = 2 kΩ
–40°C ≤ T_A ≤ +85°C
R_L = 1 kΩ, V_O = ± 10 V
R_L = 150 kΩ
0.995
0.995
0.9985
0.9980
0.005
0.008
1.005
1.005
V_S = ± 4.5 V to ± 18 V
–40°C ≤ T_A ≤ +85°C
V_O = 0 V, R_L = ∞
–40°C ≤ T_A ≤ +85°C
76
93
76
93
6.9 8.5
6.9 8.5
R_L = 2 kΩ, C_L = 70 pF
–3 dB, C_L = 20 pF, R_L = ∞
–3 dB, C_L = 20 pF, R_L = 1 kΩ
–3 dB, C_L = 20 pF, R_L = 150 Ω
V_IN = ±10 V Step to 0.1%
f = 3.58 MHz, R_L = 150 Ω
f = 4.43 MHz, R_L = 150 Ω
f = 3.58 MHz, R_L = 150 Ω
f = 4.43 MHz, R_L = 150 Ω
2000
3000
110
110
110
60
0.02
0.03
0.014
0.008
3
NOISE PERFORMANCE
Voltage Noise Density
e_n
f = 1 kHz
4
Current Noise Density
i_n
f = 1 kHz
2
NOTE
1_{Long term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 °C with an LTPD of 1.3.}
Specifications subject to change without notice.
Units
mV
mV
µA
µA
V
µV/°C
mV
V
V
V
V
mA
mA
V/V
V/V
%
%
dB
dB
mA
mA
V/µs
MHz
MHz
MHz
ns
Degrees
Degrees
%
%
pF
nV/√Hz
pA/√Hz
–2–
REV. 0