DAC8512 Datasheet, PDF (3/20 Pages) Analog Devices – % V, Serial Input Complete 12-Bit DAC

DAC8512
WAFER TEST LIMITS _{(@ VDD = +5.0 V ؎ 5%, TA = +25؇C, applies to part number DAC8512GBC only, unless otherwise noted)}
Parameter
Symbol Condition
Min Typ Max
Units
STATIC PERFORMANCE
Relative Accuracy
Differential Nonlinearity
Zero-Scale Error
Full-Scale Voltage
INL
DNL
V_ZSE
V_FS
No Missing Codes
Data = 000_H
Data = FFF_H
–2 ± 3/4 +2
LSB
–1 ± 0.7 +1
LSB
+1/2 +3
LSB
4.085 4.095 4.105 V
LOGIC INPUTS
Logic Input Low Voltage
V_IL
Logic Input High Voltage
V_IH
Input Leakage Current
I_IL
0.8
V
2.4
V
10
µA
SUPPLY CHARACTERISTICS
Positive Supply Current
Power Dissipation
Power Supply Sensitivity
I_DD
P_DISS
PSS
V_IH = 2.4 V, V_IL= 0.8 V, No Load
V_DD = 5 V, V_IL = 0 V, No Load
V_IH = 2.4 V, V_IL = 0.8 V, No Load
V_DD = 5 V, V_IL = 0 V, No Load
∆V_DD = ± 5%
1.5
0.5
7.5
2.5
0.002
2.5
1
12.5
5
0.004
mA
mA
mW
mW
%/%
NOTE
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
ABSOLUTE MAXIMUM RATINGS*
V_DD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, +10 V
Logic Inputs to GND . . . . . . . . . . . . . . . –0.3 V, V_DD + 0.3 V
V_OUT to GND . . . . . . . . . . . . . . . . . . . . . –0.3 V, V_DD + 0.3 V
I_OUT Short Circuit to GND . . . . . . . . . . . . . . . . . . . . . . 50 mA
Package Power Dissipation . . . . . . . . . . . . . . (T_J max – T_A)/θ_JA
Thermal Resistance θ_JA
8-Pin Plastic DIP Package (P) . . . . . . . . . . . . . . . . 103°C/W
8-Lead SOIC Package (S) . . . . . . . . . . . . . . . . . . . 158°C/W
Maximum Junction Temperature (T_J max) . . . . . . . . . +150°C
Operating Temperature Range . . . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature (Soldering, 10 secs) . . . . . . . . . . . . +300°C
*Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability .
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the DAC8512 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
ORDERING GUIDE
Model
INL Temperature Package Package
(LSB) Range
Description Option
DAC8512EP ± 1
DAC8512FP ± 2
DAC8512FS ± 2
DAC8512GBC ± 2
–40°C to +85°C 8-Pin P-DIP N-8
–40°C to +85°C 8-Pin P-DIP N-8
–40°C to +85°C 8-Lead SOIC SO-8
+25°C
Dice
REV. A
–3–