IS66WV51216ALL Datasheet, PDF (6/16 Pages) Integrated Silicon Solution, Inc – 8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM

IS66WV51216ALL
IS66WV51216BLL
1.7V-1.95V POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
Test Conditions Max.
Unit
70ns
Icc
Vdd Dynamic Operating

Supply Current

Vdd = Max.,
Iout = 0 mA, f = fmax
All Inputs0.4V
or Vdd – 0.2V
Com.
Ind.
Auto.
typ.⁽¹⁾
20
mA
25
30
Icc1 Operating Supply
Vdd = Max., CS1 = 0.2V Com.
4
mA

Current
WE = Vdd – 0.2V
Ind.
4

CS2 = Vdd – 0.2V, f = 1mhz Auto.
10
Isb1 TTL Standby Current Vdd = Max.,
Com.
0.6
mA
(TTL Inputs)
Vin = Vih or Vil
Ind.
0.6

CS1 = Vih , CS2 = Vil,
Auto.
1

f = 1 MHz

OR
ULB Control

Vdd = Max., Vin = Vih or Vil
CS1 = Vil, f = 0, UB = Vih, LB = Vih
Isb2
CMOS Standby
Vdd = Max.,
Com. 100
µA
Current (CMOS Inputs) CS1 ≥ Vdd – 0.2V,
Ind. 120

CS2 ≤0.2V,
Auto.
150

Vin ≥ Vdd – 0.2V, or
typ.⁽¹⁾

Vin ≤ 0.2V, f = 0

OR
ULB Control


Vdd = Max., CS1 = Vil, CS2=Vih
Vin ≥ Vdd – 0.2V, or Vin ≤ 0.2V, f = 0;
UB / LB = Vdd – 0.2V
Note:.
1.Typical values are measured at Vdd = 1.8V, Ta = 25^oC and not 100% tested.
6
Integrated Silicon Solution, Inc. — www.issi.com
Rev.  A
12/02/09