IS66WV51216ALL Datasheet, PDF (4/16 Pages) Integrated Silicon Solution, Inc – 8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM

IS66WV51216ALL
IS66WV51216BLL
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol
Parameter
Value
Unit
Vterm
Terminal Voltage with Respect to GND
–0.2 to Vdd+0.3
V
Tbias
Temperature Under Bias
–40 to +85
°C
Vdd
Vdd Related to GND
–0.2 to +3.8
V
Tstg
Storage Temperature
–65 to +150
°C
Pt
Power Dissipation
1.0
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rat-
ing conditions for extended periods may affect reliability.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
Test Conditions
Vdd
Voh
Output HIGH Voltage

Ioh = -0.1 mA
Ioh = -1 mA
1.7-1.95V
2.5-3.6V
Vol
Output LOW Voltage

Iol = 0.1 mA
Iol = 2.1 mA
1.7-1.95V
2.5-3.6V
Vih
Input HIGH Voltage

1.7-1.95V
2.5-3.6V
Vil⁽¹⁾
Input LOW Voltage
1.7-1.95V
2.5-3.6V
Ili
Input Leakage
GND ≤ Vin ≤ Vdd
Ilo
Output Leakage
GND ≤ Vout ≤ Vdd, Outputs Disabled
Notes:
1. Vil (min.) = –1.0V for pulse width less than 10 ns.
Min.
1.4
2.2
—
—
1.4
2.2
–0.2
–0.2
–1
–1
Max.
—
—
0.2
0.4
Vdd + 0.2
Vdd + 0.3
0.4
0.6
1
1
Unit
V
V
V
V
V
V
V
V
µA
µA
4
Integrated Silicon Solution, Inc. — www.issi.com
Rev.  A
12/02/09