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IS66WV51216ALL Datasheet, PDF (5/16 Pages) Integrated Silicon Solution, Inc – 8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV51216ALL
IS66WV51216BLL
CAPACITANCE(1)
Symbol Parameter
Conditions
Max.
Cin
Input Capacitance
Vin = 0V
8
Cout
Input/Output Capacitance
Vout = 0V
10
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
Unit
pF
pF
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
1.7V-1.95V
(Unit)
0.4V to Vdd-0.2
5 ns
Vref
See Figures 1 and 2
2.5V-3.6V
(Unit)
0.4V to Vdd-0.3V
5ns
Vref
See Figures 1 and 2
R1(Ω)
R2(Ω)
Vref
Vtm
1.7V - 1.95V
3070
3150
0.9V
1.8V
2.5V - 3.6V
1029
1728
1.4V
2.8V
AC TEST LOADS
R1
VTM
OUTPUT
30 pF
R2
Including
jig and
scope
Figure 1
Integrated Silicon Solution, Inc. — www.issi.com
Rev.  A
12/02/09
R1
VTM
OUTPUT
5 pF
R2
Including
jig and
scope
Figure 2
5