S1M8660A Datasheet, PDF (10/32 Pages) Samsung semiconductor – RX IF / BBA WITH GPS

S1M8660A (Preliminary)
RX IF/BBA WITH GPS
AC CHARACTERISTICS (Continued)
Characteristic
Test Conditions
Gain flatness
Amount of gain change along I and Q paths
between 1kHz to 615kHz
IF VCO perormance
VCO and
buffered output
frequency range
VCO external time constant and PLL value
VCO phase noise Tank LC's Q value should be above 20.
Measure @100kHz away from the mid-
frequency.
RXVCO_OUT
output power
Select a VCO buffer output value reduced by
-2dB. Connect output load to 50Ω.
GPS Performance
Input sensitivity
Maximum AGC gain. Control input signal so
that ADC outputs 0.5*F/S.
Maximum input
signal
Minimum AGC gain Control input signal so
that ADC outputs 0.5*F/S.
AGC gain slope PDM 3.3V Mode
AGC gain error -30 to +85°C.
over temperature
IF input
Cin < 2pF
frequency range
IF input
Impedance
Input power = -98dBm
Noise figure
Input power = -75dBm
Input power = -25dBm
IIP3
AGC gain Max.
AGC gain Min.
Offset gain slope Amount of code change of the voltage ADC
output at the I/Q offset control
Offset adjust
-
input impedance
Out-band
≥ 1.3MHz
attenuation
≥ 1.7MHz
Residual
Sideband
RSB = 20log
1 + k ² + 2k cosθ
1 + k ² − 2k cosθ
k : Linear Gain Mismatch
θ : Phase Mismatch in Deg.
Gain flatness
Amount of gain change along I and Q paths
between 1kHz to 800kHz
Symbol Min Typ
Gft
-1
-
Fvco
-
170
Pvco
-
-
Ovco
-15
-
VCSEN -98.3 -
VCMAX -
-
GSLOPE 33 45
GVAR
-3
-
Fin
- 85.38
Zin
0.8 1.0
NFmin
-
-
NFmid
-
-
NFmax
-
-
IIP3max -53
-
IIP3min -25
-
GOFS
250
Zoff
100 -
ATC13 46
-
ATC17 48
-
RSB
22
-
Gft
-1.5
Max Unit
1
dB
500 MHz
-104 dBc/
Hz
- dBm
- dBm
-8.3 dBm
53 dB/V
3
dB
150 MHz
1.2 kΩ
7
dB
12 dB
58 dB
- dBm
- dBm
%FS/
V
-
kΩ
-
dB
-
dB
-
dB
1.5 dB
10