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U635H256 Datasheet, PDF (3/13 Pages) Simtek Corporation – PowerStore 32K x 8 nvSRAM
Recommended
Operating Conditions
Power Supply Voltage
Input Low Voltage
Input High Voltage
Symbol
Conditions
VCC
VIL
-2 V at Pulse Width
10 ns permitted
VIH
U635H256
Min.
Max.
Unit
4.5
5.5
V
-0.3
0.8
V
2.2
VCC+0.3
V
DC Characteristics
Operating Supply Currentb
Average Supply Current duringc
STORE
Operating Supply Currentb
at tcR = 200 ns
(Cycling CMOS Input Levels)
Average Supply Current duringc
PowerStore Cycle
Standby Supply Currentd
(Cycling TTL Input Levels)
Standby Supply Curentd
(Stable CMOS Input Levels)
Symbol
Conditions
ICC1 VCC = 5.5 V
VIL = 0.8 V
VIH = 2.2 V
tc
= 25 ns
tc
= 35 ns
tc
= 45 ns
ICC2
ICC3
ICC4
ICC(SB)1
VCC
E
W
VIL
VIH
VCC
W
VIL
VIH
VCC
VIL
VIH
VCC
E
ICC(SB)
tc
tc
tc
VCC
E
VIL
VIH
= 5.5 V
≤ 0.2 V
≥ VCC-0.2 V
≤ 0.2 V
≥ VCC-0.2 V
= 5.5 V
≥ VCC-0.2 V
≤ 0.2 V
≥ VCC-0.2 V
= 4.5 V
= 0.2 V
≥ VCC-0.2 V
= 5.5 V
= VIH
= 25 ns
= 35 ns
= 45 ns
= 5.5 V
≥ VCC-0.2 V
≤ 0.2 V
≥ VCC-0.2 V
C-Type
K-Type
Unit
Min. Max. Min. Max.
95
100 mA
75
80 mA
65
70 mA
6
7 mA
15
15 mA
4
4 mA
40
42 mA
36
38 mA
33
35 mA
3
3 mA
b: ICC1 and ICC3 are depedent on output loading and cycle rate. The specified values are obtained with outputs unloaded.
The current ICC1 is measured for WRITE/READ - ratio of 1/2.
c: ICC2 and ICC4 are the average currents required for the duration of the respective STORE cycles.
d: Bringing E ≥ VIH will not produce standby current levels until any nonvolatile cycle in progress has timed out. See MODE SELECTION
table. The current ICC(SB)1 is measured for WRITE/READ - ratio of 1/2.
December 12, 1997
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