U635H256 Datasheet, PDF (2/13 Pages) Simtek Corporation – PowerStore 32K x 8 nvSRAM

U635H256
Block Diagram
A5
A6
A7
A8
A9
A11
A12
A13
A14
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
Truth Table forSRAM Operations
EEPROM Array
512 x (64 x 8)
STORE
SRAM
Array
RECALL
512 Rows x
64 x 8 Columns
Column I/O
Column Decoder
A0 A1 A2 A3 A4 A10
Power
Control
V_CC
V_SS
V_CC
Store/
Recall
Control
Software
Detect
A0 - A13
G
E
W
Operating Mode
E
W
G
DQ0 - DQ7
Standby/not selected
H
*
*
Internal Read
L
H
H
High-Z
High-Z
Read
L
H
L
Data Outputs Low-Z
* H or L
Write
L
L
*
Data Inputs High-Z
Characteristics
All voltages are referenced to V_SS = 0 V (ground).
All characteristics are valid in the power supply voltage range and in the operating temperature range specified.
Dynamic measurements are based on a rise and fall time of ≤ 5 ns, measured between 10 % and 90 % of V_I, as well as
input levels of V_IL = 0 V and V_IH = 3 V. The timing reference level of all input and output signals is 1.5 V,
with the exception of the t_dis-times and t_en-times, in which cases transition is measured ± 200 mV from steady-state voltage.
Absolute Maximum Ratings^a
Symbol
Min.
Max.
Unit
Power Supply Voltage
Input Voltage
V_CC
-0.5
7
V
V_I
-0.3
V_CC+0.5
V
Output Voltage
V_O
-0.3
V_CC+0.5
V
Power Dissipation
P_D
Operating Temperature
C-Type
T_a
0
K-Type
-40
1
W
70
°C
85
°C
Storage Temperature
T_stg
-65
150
°C
a: Stresses greater than those listed under „Absolute Maximum Ratings“ may cause permanent damage to the device. This is a stress
rating only, and functional operation of the device at condition above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2
December 12, 1997