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U6264AS1A07 Datasheet, PDF (3/8 Pages) Zentrum Mikroelektronik Dresden AG – Automotive 8K x 8 SRAM
U6264ASA07
Recommended
Operating Conditions
Power Supply Voltage
Data Retention Voltage
Input Low Voltage*
Input High Voltage
* -2 V at Pulse Width 10 ns
Symbol
VCC
VCC(DR)
VIL
VIH
Conditions
Min.
Max.
Unit
4.5
5.5
V
2.0
-
V
-0.3
0.8
V
2.2
VCC+0.3
V
Electrical Characteristics
Supply Current - Operating Mode
Supply Current - Standby Mode
(TTL level)
Output High Voltage
TTL compatible
CMOS compatible
Output Low Voltage
Output High Current
Output Low Current
Supply Current - Standby Mode
(CMOS level)
Supply Current - Data Retention
Mode
Input High Leakage Current
Input Low Leakage Current
Output Leakage Current
High at Three-State Outputs
Low at Three-State Outputs
Symbol
Conditions
Min.
ICC(OP)
VCC
VIL
VIH
tcW
= 5.5 V
= 0.8 V
= 2.2 V
= 70 ns
ICC(SB)1
VOH
VOH
VCC
VE1 = VE2
or VE2
= 5.5 V
= 2.2 V
= 0.8 V
VCC
= 4.5 V
IOH
= -1.0 mA
2.4
0.85*VCC
VOL
VCC
= 4.5 V
-
IOL
= 3.2 mA
IOH
VCC
= 4.5 V
-
VOH
= 2.4 V
IOL
VCC
= 4.5 V
3.2
VOL
= 0.4 V
ICC(SB)
VCC
= 5.5 V
VE1 = VE2 = VCC - 0.2 V
or VE2
= 0.2 V
ICC(DR)
VCC(DR)
VE1 = VE2
or
VE2
= 3V
= VCC(DR) -
0.2 V
= 0.2 V
IIH
VCC
= 5.5 V
-
VIH
= 5.5 V
IIL
VCC
= 5.5 V
-2
VIL
= 0V
Max.
55
3
-
-
0.4
-1
-
30
10
2
-
IOHZ
IOLZ
VCC
VOH
VCC
VOL
= 5.5 V
= 5.5 V
= 5.5 V
= 0V
-
2
-2
-
Unit
mA
mA
V
V
V
mA
mA
µA
µA
µA
µA
µA
µA
December 12, 1997
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