U6264AS1A07 Datasheet, PDF (2/8 Pages) Zentrum Mikroelektronik Dresden AG – Automotive 8K x 8 SRAM

U6264ASA07
Block Diagram
A4
A5
A6
A7
A8
A9
A11
A12
Memory Cell
Array
256 Rows x
256 Columns
A0
A1
A2
A3
A10
Address
Change
Detector
E2
1
E1
Sense Amplifier/
Write Control Logic
Clock
Generator
V_CC
V_SS
WG
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
Truth Table
Operating Mode
E1
E2
W
G
DQ0 - DQ7
Standby/not
selected
Internal Read
Read
Write
* ^{H or L}
*
L
*
*
High-Z
H
*
*
*
High-Z
L
H
H
H
High-Z
L
H
H
L
Data Outputs, Low-Z
L
H
L
*
Data Inputs, High-Z
Characteristics
All voltages are referenced to V_SS = 0 V (ground).
All characteristics are valid in the power supply voltage range and in the operating temperature range specified.
Dynamic measurements are based on a rise and fall time of ≤ 5 ns, measured between 10 % and 90 % of V_I, as well as
input levels of V_IL = 0 V and V_IH = 3 V. The timing reference level of all input and output signals is 1.5 V,
with the exception of the t_dis-times, in which cases transition is measured ± 200 mV from steady-state voltage.
Maximum Ratings
Power Supply Voltage
Input Voltage
Output Voltage
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V_CC
V_I
V_O
P_D
T_a
T_stg
Min.
-0.3
-0.3
-0.3
-40
-65
Max.
7
V_CC + 0.5
V_CC + 0.5
1
125
150
Unit
V
V
V
W
°C
°C
2
December 12, 1997