Z8FMC16MCU Datasheet, PDF (9/14 Pages) Zilog, Inc. – Z8 Encore-R Motor Control Series

Z8FMC16 MCU
Programming Specification
7
continuously asserted until all bytes in a row are programmed. This allows the row to be
programmed faster than if these signals are deasserted after programming each byte.
During row programming, you must ensure that the cumulative programming high voltage
period does not exceed the specification limits for a row.
Flash Memory Timing
Table 5 and Figures 4 through Figure 7 provides the detailed timing information on
accessing the Flash memory in Flash controller bypass mode.
Table 5. Flash Memory Timing Parameters
Parameter
Symbol
Min.
Max.
Unit
X address access time
Txa
-
40
ns
Y address access time
Tya
-
40
ns
OE access time
Toa
-
4
ns
PROG/ERASE to NVSTR setup time Tnvs
5
-
s
NVSTR hold time
Tnvh
5
-
s
NVSTR hold time (Mass Erase)
Tnvh1
100
-
s
NVSTR to program setup time
Tpgs
10
-
s
Program hold time
Tpgh
20
-
ns
Byte program time
Tprog
30
60
s
Address / Data setup time
Tads
20
-
ns
Address / Data hold time
Tadh
20
-
ns
Recovery time
Trcv
1
Cumulative program high voltage period¹ Thv
-
-
s
12
ms
Erase time
Terase
10
-
ms
Mass Erase time
Tme
200
-
ms
1_{Thv is the cumulative high voltage programming time for a single row before the next erase.}
Caution:
The same address (byte) cannot be programmed more than twice before
the next erase.
PRS000502-1005
PRELIMINARY
Flash Memory Programming Overview