FXT618 Datasheet, PDF (4/4 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

ZTX618
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Thermal Resistance:
Junction to Ambient₁
Junction to Ambient₂
R_th(j-amb)1
R_th(j-amb)2 †
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
MAX.
175
116
UNIT
°C/W
°C/W
180
160 ^D=1(D.C.)
t1
140
120
100
D=0.5
80
60 D=0.2
D=0.1
40 ^D=0.05
20
D=t1
tP
tP
Single Pulse
0
0.1ms
1ms 10ms 100ms 1s
Pulse Width
10s 100s
Transient Thermal Resistance
1.0
0.75
0.50
0.25
-40
0
40
80
120 160 200
T -Temperature (° C)
Derating curve
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©Zetex plc 1997
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