FXT618 Datasheet, PDF (1/4 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 2 – JULY 1995
FEATURES
* 10A Peak pulse current
* Excellent h_FE characteristics up to10A (pulsed)
* Extremely low saturation voltage e.g. 7mV typ.
* I_C cont 3.5A
APPLICATIONS
* Power MOSFET gate driver in conjunction with
complementary ZTX718
ZTX618
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Practical Power Dissipation*
Power Dissipation
Operating and Storage Temperature Range
V_CBO
V_CEO
V_EBO
I_CM
I_C
I_B
P_totp
P_tot
T_j:T_stg
20
20
5
10
3.5
500
1.5
1
-55 to +200
* Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
UNIT
V
V
V
A
A
mA
W
W
°C