FXT618 Datasheet, PDF (3/4 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

ZTX618
0.4
25°C
0.3
0.2
0.1
TYPICAL CHARACTERISTICS
I+/I*=100
I+/I*=50
I+/I*=10
0.4
I+/I*=50
0.3
0.2
0.1
100°C
25°C
-55°C
0
1mA
10mA 100mA
1A
10A
IC-Collector Current
VCE(sat) v IC
0
1mA
10mA 100mA
1A
10A
IC-Collector Current
VCE(sat) v IC
100°C
450
25°C
225 -55°C
V+-=2V
0
1mA
10mA 100mA
1A
10A
IC-Collector Current
hFE v IC
1.0 ^V+-=2V
0.8
0.6
0.4
-55°C
25°C
100°C
0.2
0
1mA
10mA 100mA
1A
10A
IC-Collector Current
VBE(on) v IC
1.2 _I+/I*=50
1.0
0.8
0.6
0.4
-55°C
25°C
100°C
0.2
0
1mA
10mA 100mA
1A
10A
IC-Collector Current
VBE(sat) v Ic
10
Single Pulse Test Tamb=25C
1
DC
1s
0.1
100ms
10ms
1ms
100µs
0.01
0.1V
1V
10V
VCE - Collector Voltage
Safe Operating Area
100V