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| FXT618 Datasheet, PDF (2/4 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR | |||
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ZTX618
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
V(BR)CBO
Breakdown Voltage
20 100
V
IC=100µA
Collector-Emitter
V(BR)CEO
Breakdown Voltage
20 27
V
IC=10mA*
Emitter-Base
V(BR)EBO
Breakdown Voltage
5
8.3
V
IE=100µA
Collector Cut-Off
ICBO
Current
100 nA VCB=16V
Emitter Cut-Off
IEBO
Current
100 nA VEB=4V
Collector Emitter
ICES
Cut-Off Current
100 nA VCES=16V
Collector-Emitter
VCE(sat)
Saturation Voltage
Base-Emitter
VBE(sat)
Saturation Voltage
7 15 mV
80 150 mV
210 255 mV
0.93 1.05 V
IC=0.1A, IB=10mA*
IC=1A, IB=10mA*
IC=3.5A, IB=50mA*
IC=3.5A, IB=50mA*
Base-Emitter
Turn-On Voltage
VBE(on)
0.86 1.0 V
IC=3.5A, VCE=2V*
Static Forward
hFE
Current Transfer
Ratio
Transition
fT
Frequency
200 400
300 450
170 300
40 85
100 140
MHz
IC=10mA, VCE=2V*
IC=200mA, VCE=2V*
IC=3A, VCE=2V*
IC=10A, VCE=2V*
IC=50mA, VCE=10V
f=100MHz
Output Capacitance Cobo
23 30 pF
Turn-On Time
t(on)
170
ns
Turn-Off Time
t(off)
400
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
VCB=10V, f=1MHz
VCC=10V, IC=1A
IB1=-IB2=10mA
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