MUN5311DW Datasheet, PDF (8/29 Pages) Weitron Technology – Dual Bias Resistor Transistor NPN+PNP Silicon

DEVICE CHARACTERISTICS
MUN5311DW Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5312DW PNP TRANSISTOR
10
I_C/I_B = 10
1000
V_CE = 10 V
1
25°C
T_A = −25°C
100
75°C
0.1
T_A = 75°C
25°C
−25°C
0.01
0
20
40
I_C, COLLECTOR CURRENT (mA)
Figure 17. V_CE(sat) versus I_C
10
50
1
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 18. DC Current Gain
4
100
3
f = 1 MHz
l_E = 0 V
T_A = 25°C
75°C ^25°C
T_A = −25°C
10
1
2
0.1
1
0.01
V_O = 5 V
0
0
10
20
30
40
50
0.001 _{0 1 2 3 4 5 6 7 8 9 10}
V_R, REVERSE BIAS VOLTAGE (VOLTS)
V_in, INPUT VOLTAGE (VOLTS)
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
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100
V_O = 0.2 V
T_A = −25°C
10
25°C
75°C
1
0.1
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 21. Input Voltage versus Output Current
8
REV.02 20130927