MUN5311DW Datasheet, PDF (18/29 Pages) Weitron Technology – Dual Bias Resistor Transistor NPN+PNP Silicon

DEVICE CHARACTERISTICS
MUN5311DW Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5330DW PNP TRANSISTOR
1
100
I_C/I_B = 10
75°C
0.1
−25°C
25°C
10
0.01
75°C
25°C
T_A = −25°C
0.001
0
10
20
30
40
I_C, COLLECTOR CURRENT (mA)
Figure 66. V_CE(sat) versus I_C
1
50
1
V_CE = 10 V
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 67. DC Current Gain
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
f = 1 MHz
I_E = 0 V
T_A = 25°C
5 10 15 20 25 30 35 40 45 50
V_R, REVERSE BIAS VOLTAGE (VOLTS)
Figure 68. Output Capacitance
100
75°C
10
25°C
1
T_A = −25°C
0.1
0.01
V_O = 5 V
0.001
01
234567 8
V_in, INPUT VOLTAGE (VOLTS)
9 10
Figure 69. Output Current versus Input Voltage
10
T_A = −25°C
1
75°C
25°C
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V_O = 0.2 V
0.1
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 70. Input Voltage versus Output Current
18
REV.02 20130927