MUN5311DW Datasheet, PDF(4/29 Page) Weitron Technology – Dual Bias Resistor Transistor NPN+PNP Silicon

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

MUN5311DW Datasheet, PDF (4/29 Pages) Weitron Technology – Dual Bias Resistor Transistor NPN+PNP Silicon

◁

DEVICE CHARACTERISTICS

MUN5311DW Series

ELECTRICAL CHARACTERISTICS

(TA = 25Â°C unless otherwise noted, common for Q1 and Q2, â minus sign for Q1 (PNP) omitted)

Characteristic

Symbol

Min

Typ

OFF CHARACTERISTICS

Collector-Base Cutoff Current (VCB = 50 V, IE = 0)

Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)

Emitter-Base Cutoff Current

(VEB = 6.0 V, IC = 0)

MUN5311DW

MUN5312DW

MUN5313DW

MUN5314DW

MUN5315DW

MUN5316DW

MUN5330DW

MUN5331DW

MUN5332DW

MUN5333DW

MUN5334DW

MUN5335DW

ICBO

ICEO

IEBO

Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)

V(BR)CBO

Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0)

V(BR)CEO

3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

ALL MUN5311DW SERIES DEVICES

300

250

200

150

100

RqJA = 490Â°C/W

â 50

100

150

TA, AMBIENT TEMPERATURE (Â°C)

Figure 1. Derating Curve

Max

Unit

100

nAdc

500

nAdc

0.5

mAdc

0.2

0.1

0.2

0.9

1.9

4.3

2.3

1.5

0.18

0.13

0.2

Vdc

http://www.yeashin.com

REV.02 20130927

▷