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MMBT5087 Datasheet, PDF (4/7 Pages) Samsung semiconductor – PNP (LOW NOISE TRANSISTOR)
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DEVICE CHARACTERISTICS
MMBT5087
TYPICAL STATIC CHARACTERISTICS
1.0
T =25°C
A
0.8
0.6
IC=1.0mA 10mA
50mA 100mA
0.4
0.2
0
0.002 0.0050.01 0.02
0.05 0.1 0.2
0.5 1.0 2.0
5.0 10 20
I B , BASE CURRENT (mA)
Figure 6. Collector Saturation Region
1.4
T J=25°C
1.2
1.0
0.8
VBE(sat) @ I C /I B = 10
0.6
V @ BE(on) VCE=1.0V
0.4
0.2
V CE(sat) @ I C /I B = 10
0
0.1 0.2
0.5 1.0 2.0
5.0 10 20
I C , COLLECTOR CURRENT (mA)
Figure 10. “On” Voltages
50 100
100
T A = 25°C
PULSE WIDTH =300 µs
80 DUTYCYCLE<2.0%
300µA
60
350µA
40
20
I B= 400 µA
250 µA
200 µA
150 µA
100 µA
50µA
0
0
5.0
10
15
20
25
30
35
40
V CE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 7. Collector Characteristics
1.6
*APPLIES for I C / I B<hFE / 2
0.8
∗ θ VC for V CE(sat)
0
25°C to 125°C
–55°C to 25°C
–0.8
–1.6
θ VB for V BE
25°C to 125°C
–55°C to 25°C
–2.4
0.1 0.2
0.5 1.0 2.0
5.0 10 20
50 100
I C , COLLECTOR CURRENT (mA)
Figure 11. Temperature Coefficients
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REV.02 20120403
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