|
MMBT5087 Datasheet, PDF (2/7 Pages) Samsung semiconductor – PNP (LOW NOISE TRANSISTOR) | |||
|
◁ |
ELECTRICAL CHARACTERISTICS
MMBT5087
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
ON CHARACTERISTICS
DC Current Gain
(I C = â100µAdc, V CE = â5.0 Vdc)
(I C = â1.0 mAdc, V CE = â5.0 Vdc)
(I C = â10 mAdc, V CE = â5.0 Vdc)
CollectorâEmitter Saturation Voltage
(I C = â10 mAdc, I B = â1.0 mAdc)
h FE
V CE(sat)
250
250
250
ââ
BaseâEmitter Saturation Voltage
(I C = â10 mAdc, I B = â1.0 mAdc)
V BE(sat)
ââ
SMALLâSIGNAL CHARACTERISTICS
CurrentâGain â Bandwidth Product
(I C = â500 µAdc, V CE= â5.0 Vdc, f = 20 MHz)
Output Capacitance
(V CB= â5.0 Vdc, I E = 0, f = 1.0 MHz)
SmallâSignal Current Gain
(I C= â1.0mAdc, V CE = â5.0Vdc, f = 1.0 kHz)
Noise Figure
fT
40
C obo
h fe
â
250
NF
(I C = â20 mAdc, V CE= â5.0 Vdc,Rs=10kâ¦, f = 1.0 kHz)
â
(I C = â100µAdc, V CE= â5.0 Vdc,Rs=3.0kâ¦, f = 1.0 kHz)
â
Max
800
ââ
ââ
â 0.3
â 0.85
â
4.0
900
2.0
2.0
Unit
ââ
Vdc
Vdc
MHz
pF
â
dB
http://www.yeashin.com
2
REV.02 20120403
|
▷ |