MMBT5087 Datasheet, PDF (1/7 Pages) Samsung semiconductor – PNP (LOW NOISE TRANSISTOR)

SEMICONDUCTOR
DATA SHEET
Low Noise Transistor
PNP Silicon
MMBT5087
H
SOT–23 (TO–236AB)
3
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
DEVICE MARKING
MMBT5087=2Q
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation RF-5 Board (1)
T A =25 °C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
V CEO
V CBO
V EBO
IC
Value
– 50
– 50
– 3.0
– 50
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
PD
R θJA
PD
R θJA
T J , T stg
Max
225
1.8
556
300
2.4
417
–55 to +150
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = –1.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage
(I C = –100 µAdc, I E = 0)
Collector Cutoff Current
(V CB = –10 Vdc, I E= 0)
(V CB = –35 Vdc, I E= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
V (BR)CEO
V (BR)CBO
I CBO
Min
– 50
– 50
—
—
1
1
BASE
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Max
—
—
–10
–50
2
3
COLLECTOR
2
EMITTER
Unit
Vdc
Vdc
n Adc
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REV.02 20120403