MMBT5087 Datasheet, PDF (3/7 Pages) Samsung semiconductor – PNP (LOW NOISE TRANSISTOR)

DEVICE CHARACTERISTICS
MMBT5087
10
7.0
5.0
3.0
2.0 1.0mA
1.0
10 20
TYPICAL NOISE CHARACTERISTICS
(V _CE = – 5.0 Vdc, T _A = 25°C)
10.0
BANDWIDTH = 1.0 Hz
7.0
R _S^~ ~ 0
5.0
I_C=10 µA
3.0
2.0
30µA
1.0
100µA
0.7
300µA
0.5
0.3
0.2
I =1.0mA
C
BANDWIDTH = 1.0 Hz
R _S ^~ ~
300µA
100µA
30µA
10µA
50 100 200
500 1.0k 2.0k
5.0k 10k
0.1
10 20
50 100 200 500 1.0k 2.0k 5.0k 10k
f, FREQUENCY (Hz)
Figure 1. Noise Voltage
f, FREQUENCY (Hz)
Figure 2. Noise Current
NOISE FIGURE CONTOURS
(V _CE = – 5.0 Vdc, T _A = 25°C)
1.0M
500k
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
10
BANDWIDTH = 1.0 Hz
0.5 dB
1.0 dB
2.0dB
3.0dB
5.0dB
20 30
50 70 100
200 300 500 700 1.0K
I _C , COLLECTOR CURRENT (µA)
Figure 3. Narrow Band, 100 Hz
1.0M
500k
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
10
BANDWIDTH = 1.0 Hz
0.5dB
1.0dB
2.0 dB
3.0dB
5.0 dB
20 30 50 70 100
200 300 500 700 1.0K
I _C , COLLECTOR CURRENT (µA)
Figure 4. Narrow Band, 1.0 kHz
1.0M
500k
10 Hz to 15.7kHz
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
10
0.5dB
1.0dB
2.0dB
3.0 dB
5.0 dB
20 30
50 70 100
200 300 500 700 1.0K
I _C , COLLECTOR CURRENT (µA)
Figure 5. Wideband
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3
Noise Figure is Defined as:
( –––––––––––––––) NF = 20 log ₁₀
e
n
2
+
4KTR_S
+
I
2
n
R
2
S
1/ 2
4KTR _S
e _n = Noise Voltage of the Transistor referred to the input. (Figure 3)
I _n = Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10 ^–23 j/°K)
T = Temperature of the Source Resistance (°K)
R _s = Source Resistance ( Ω )
REV.02 20120403