UM8220N8 Datasheet, PDF (5/7 Pages) ShenZhen XinDeYi Electronics Co., Ltd. – Dual N-Channel E nhancement Mode F ield E ffect Transistor

UM8220N8
900
C is s
750
600
C oss
450
300
C rss
6
150
0
2
4
6
8 10 12
V DS , Drain-to S ource Voltage (V )
F igure 9. C apacitance
5
VDS =10V
4
ID=4A
3
2
1
0
0 2 4 6 8 10 12 14 16
Qg, T otal G ate C harge (nC )
F igure 10. G ate C harge
600
100
60
10
T D (o ff)
Tr
Tf
T D (on)
80
10
R ^{DS(ON) Limit}
1
10ms
100ms
1s
DC
V DS =10V ,ID=1A
1
VGS= 4 V
1
6 10
60 100 300 600
R g, G ate R es is tance (W)
F igure 11.s witching characteris tics
1
D = 0.5
0.1 VGS =4V
S ingle P ulse
0.03 ^{TA=25 C}
0.1
1
10 30 50
V DS , Drain-S ource V oltage (V )
F igure 12. Maximum S afe
O perating Area
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.0001
0.001
SINGLE PULSE
RJA (t ) = ( r t) * RJA
RJA =80 °C/W
P(pk)
t1
t2
TJ - TA = P * R JA (t)
Duty Cycle , D = t1 / t2
0.01
0.1
1
t₁, TIME (sec)
10
100
Figure 13. Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
1000
5