UM8220N8 Datasheet, PDF (1/7 Pages) ShenZhen XinDeYi Electronics Co., Ltd. – Dual N-Channel E nhancement Mode F ield E ffect Transistor

Unitpower
UM8220N8
Oct.23 2006 ver1.1
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( mW ) Max
20V
7A
20 @ VGS = 4.0V
28 @ VGS = 2.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
E S D P rotected.
S1
S1
S1
PIN 1
G1
D1/D2
S2
S2
S2
G2
(B ottom view)
DFN 2X3
S1
S1
S1
G1
Bottom Drain Contact
4
5
Q1
3
6
2
7
1
Q2
8
Bottom Drain Contact
S2
S2
S2
G2
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS
20
V
Gate-S ource Voltage
VGS
12
V
Drain C urrent-C ontinuous @ TJ=25 C
ID
b
-P ulsed
IDM
7
A
30
A
Drain-S ource Diode Forward C urrent ^a
IS
1.7
A
Maximum P ower Dissipation ^a
PD
1.56
W
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient ^a
R JA
80
C /W
1