UM8220N8 Datasheet, PDF (3/7 Pages) ShenZhen XinDeYi Electronics Co., Ltd. – Dual N-Channel E nhancement Mode F ield E ffect Transistor

UM8220N8
E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
DRAIN-SOURCE DIODE CHARACTERISTICS ^b
Diode Forward Voltage
VSD VGS = 0 V, Is = 1.7A
Min Typ Max Unit
0.8 1.2 V
Notes
a.Surface Mounted on FR 4 Board, t <=10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
20
V GS =4V
V GS =2.5V
16
V GS =2V
12
V GS =1.5V
8
4
0
0 0.5 1 1.5 2 _2.5 3
V DS , Drain-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
15
12
9
6
-55 C
3
T j=125 C
25 C
0
0 0.5 1.0 1.5 2.0 2.5 3.0
V G S , G ate-to-S ource Voltage (V )
F igure 2. Trans fer C haracteris tics
60
50
40
30
V GS =2.5V
20
V GS =4V
10
0
1
4
8
12
16
20
ID, Drain C urrent (A)
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
1.8
1.6
1.4
V G S =4V
ID=6A
1.2
V G S =2.5V
ID=4A
1.0
0.8
0 25 50 75 100 125 150
T j( C )
T j, J unction T emperature ( C )
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
3