UM8220N8 Datasheet, PDF (2/7 Pages) ShenZhen XinDeYi Electronics Co., Ltd. – Dual N-Channel E nhancement Mode F ield E ffect Transistor

UM8220N8
E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted)
P a ra meter
OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain C urrent
Gate-Body Leakage
ON CHARACTERISTICS ^b
Gate Threshold Voltage
S ymbol
BVDSS
IDSS
IGSS
V G S (th)
Drain-S ource On-S tate R esistance R DS(ON)
Forward Transconductance
g_FS
DYNAMIC CHARACTERISTICS ^c
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS ^c
Turn-On Delay Time
tD(ON)
R ise Time
tr
Turn-Off Delay Time
tD(O F F )
Fall Time
tf
Total Gate C harge
Qg
Gate-S ource Charge
Qgs
Gate-Drain C harge
Qgd
C ondition
VGS _=0V, ID =250uA
VDS =16V, VGS =0V
VGS ₌ 12V,VDS =0V
VDS =VGS, ID = 250uA
VGS =4.0V, ID = 7A
VGS ^=2.5V, ID = 4A
VDS = 5V, ID =4A
VDS =10V, VGS = 0V
f =1.0MHZ
VDD = 10V,
ID = 1A,
VGEN = 4.0V,
R GEN= 6 ohm
VDS =10V, ID = 4A,
VGS =4.0V
Min Typ ^C Max Unit
20
V
1 uA
10 uA
0.5 0.8 1.5 V
17.5 20 ^{m ohm}
21 28 ^{m ohm}
12
S
670
PF
188
PF
140
PF
15
ns
32
ns
50
ns
30
ns
10
nC
1.4
nC
4.2
nC
2