W25Q128FVSIF-TR Datasheet, PDF (84/100 Pages) Winbond – 3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI

W25Q128FV
9.4 DC Electrical Characteristics
PARAMETER
Input Capacitance
Output Capacitance
SYMB
OL
CIN⁽¹⁾
Cout⁽¹⁾
CONDITIONS
VIN = 0V
VOUT = 0V
SPEC
UNI
MIN
TYP
MAX
T
6
pF
8
pF
Input Leakage
ILI
±2
µA
I/O Leakage
Standby Current
Power-down Current
Current Read Data /
Dual /Quad 50MHz
Current Read Data /
Dual /Quad 80MHz
Current Read Data /
Dual Output Read/Quad
Output Read 104MHz
Current Write Status
Register
Current Page Program
Current Sector/Block
Erase
Current Chip Erase
ILO
ICC1
ICC2
ICC3⁽²⁾
ICC3⁽²⁾
ICC3⁽²⁾
ICC4
ICC5
ICC6
ICC7
/CS = VCC,
VIN = GND or VCC
/CS = VCC,
VIN = GND or VCC
C = 0.1 VCC / 0.9 VCC
DO = Open
C = 0.1 VCC / 0.9 VCC
DO = Open
C = 0.1 VCC / 0.9 VCC
DO = Open
/CS = VCC
/CS = VCC
/CS = VCC
/CS = VCC
±2
µA
10
50
µA
1
20
µA
15
mA
18
mA
20
mA
8
12
mA
20
25
mA
20
25
mA
20
25
mA
Input Low Voltage
VIL
–0.5
VCC x 0.3
V
Input High Voltage
VIH
VCC x 0.7
VCC + 0.4
V
Output Low Voltage
Output High Voltage
VOL
VOH
IOL = 100 µA
IOH = –100 µA
VCC –
0.2
0.2
V
V
Notes:
1. Tested on sample basis and specified through design and characterization data. TA = 25° C, VCC = 3.0V, 25% driver strength.
2. Checker Board Pattern.
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