W25Q128FVSIG_13 Datasheet, PDF (82/97 Pages) Winbond – 3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI

W25Q128FV
9.4 DC Electrical Characteristics⁽¹⁾
PARAMETER
SYMBOL CONDITIONS
SPEC
UNIT
MIN
TYP
MAX
Input Capacitance
CIN
VIN = 0V
6
pF
Output Capacitance
Cout
VOUT = 0V
8
pF
Input Leakage
ILI
±2
µA
I/O Leakage
ILO
±2
µA
Standby Current
ICC1
/CS = VCC,
VIN = GND or VCC
10
50
µA
Power-down Current
ICC2
/CS = VCC,
VIN = GND or VCC
1
20
µA
Current Read Data /
Dual /Quad 1MHz⁽²⁾
ICC3
C = 0.1 VCC / 0.9 VCC
DO = Open
4
10
mA
Current Read Data /
Dual /Quad 50MHz⁽²⁾
ICC3
C = 0.1 VCC / 0.9 VCC
DO = Open
15
mA
Current Read Data /
Dual /Quad 80MHz⁽²⁾
ICC3
C = 0.1 VCC / 0.9 VCC
DO = Open
18
mA
Current Read Data /
Dual Output Read/Quad
Output Read 104MHz⁽²⁾
ICC3
C = 0.1 VCC / 0.9 VCC
DO = Open
20
mA
Current Write Status
Register
ICC4
/CS = VCC
8
12
mA
Current Page Program ICC5
/CS = VCC
20
25
mA
Current Sector/Block
Erase
ICC6
/CS = VCC
20
25
mA
Current Chip Erase
ICC7
/CS = VCC
20
25
mA
Input Low Voltage
VIL
–0.5
VCC x 0.3
V
Input High Voltage
VIH
VCC x 0.7
VCC + 0.4
V
Output Low Voltage
VOL
IOL = 100 µA
0.2
V
Output High Voltage
VOH
IOH = –100 µA
VCC – 0.2
V
Notes:
1. Tested on sample basis and specified through design and characterization data. TA = 25° C, VCC = 3.0V, 100% driver strength.
2. Checker Board Pattern.
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