W25P022A Datasheet, PDF (7/17 Pages) Winbond – 64K X 32 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM

W25P022A
OPERATING CHARACTERISTICS
(VDD/VDDQ = 3.15V to 3.6V, VSS/VSSQ = 0V, TA = 0 to 70° C)
PARAMETER
SYM.
TEST CONDITIONS
Input Low Voltage
VIL
-
Input High Voltage
VIH
-
Input Leakage Current ILI VIN = VSSQ to VDDQ
Output Leakage
Current
ILO VI/O = VSSQ to VDDQ, and data
I/O pins in high-Z state defined
in truth table
Output Low Voltage
VOL IOL = +8.0 mA
Output High Voltage VOH IOH = -4.0 mA
Operating Current
IDD TCYC ≥ min., I/O = 0 mA
Standby Current
ISB Unselected mode defined in
truth table, VIN, VIO = VIH
(min.) /VIL (max.) TCYC ≥ min.
ZZ Mode Current
IZZ ZZ mode, TCYC ≥ min.
Note: Typical characteristics are measured at VDD = 3.3V, TA = 25° C.
MIN. TYP
.
-0.5 -
+2.0 -
-10 -
-10 -
-
-
2.4 -
-
-
-
-
-
-
MAX. UNIT
+0.8
V
VDD +0.3 V
+10
µA
+ 10
µA
0.4
V
-
V
250
mA
80
mA
5
mA
CAPACITANCE
(VDD = 3.3V, TA = 25° C, f = 1 MHz)
PARAMETER
SYM.
Input Capacitance
CIN
Input/Output Capacitance
CI/O
Note: These parameters are sampled but not 100% tested.
CONDITIONS
VIN = 0V
VOUT = 0V
MAX.
6
8
UNIT
pF
pF
AC TEST CONDITIONS
PARAMETER
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Level
Output Load
CONDITIONS
0V to 3V
2 nS
1.5V
CL = 30 pF, IOH/IOL = -4 mA/8 mA
Publication Release Date: September 1996
-7-
Revision A1