W25P022A Datasheet, PDF (6/17 Pages) Winbond – 64K X 32 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM

W25P022A
Write Table, continued
READ/WRITE FUNCTION
Write byte 4, byte 2
Write byte 4, byte 2, byte 1
Write byte 4, byte 3
Write byte 4, byte 3, byte 1
Write byte 4, byte 3, byte 2
Write all bytes I/O1−I/O32
Write all bytes I/O1−I/O32
GW
BWE
BW4
BW3
BW2
BW1
1
0
0
1
0
1
1
0
0
1
0
0
1
0
0
0
1
1
1
0
0
0
1
0
1
0
0
0
0
1
1
0
0
0
0
0
0
X
X
X
X
X
The ZZ state is a low-power state in which the device consumes less power than in the unselected
mode. Enabling the ZZ pin for a fixed period of time will force the SRAM into the ZZ state. Pulling the
ZZ pin low for a set period of time will wake up the SRAM again. While the SRAM is in ZZ mode, data
retention is guaranteed, but the chip will not monitor any input signal except for the ZZ pin. In the
unselected mode, on the other hand, all the input signals are monitored.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RATING
UNIT
Core Supply Voltage to Vss
-0.5 to 4.6
V
I/O Supply Voltage to Vss
-0.5 to 4.6
V
Input/Output to VSSQ Potential
VSSQ -0.5 to VDDQ +0.5
V
Allowable Power Dissipation
1.0
W
Storage Temperaure
-65 to 150
°C
Operating Temperature
0 to +70
°C
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
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