W24258 Datasheet, PDF (7/11 Pages) Winbond – 32K X 8 CMOS STATIC RAM

W24258
DATA RETENTION CHARACTERISTICS
(TA (°C) =-20 to 85 for LE; -40 to 85 for LI)
PARAMETER
SYM.
TEST CONDITIONS
VDD for Data Retention
VDR _{CS ≥ VDD -0.2V}
Data Retention Current
IDDDR _{CS ≥ VDD -0.2V, VDD = 3V}
Chip Deselect to Data
Retention Time
TCDR See data retention waveform
Operation Recovery Time TR
* Read Cycle Time
MIN. TYP. MAX. UNIT
2.0 -
-
V
-
-
2 µA
0
-
-
nS
TRC* -
-
nS
DATA RETENTION WAVEFORM
VDD
0.9 VDD
VDR _=> 2V
0.9VDD
TCDR
TR
CS
VIH
CS _=> VDD - 0.2V
VIH
ORDERING INFORMATION
PART NO.
ACCESS OPERATING
OPERATING
TIME (nS) VOLTAGE (V) TEMPERATURE (°C)
PACKAGE
W24258H
100
3V
0 to 70
Die form
W24258-70LE
70/100
5V/3V
-20 to 85
600 mil DIP
W24258S-70LE
70/100
5V/3V
-20 to 85
330 mil SOP
W24258Q-70LE 70/100
5V/3V
-20 to 85
Standard type one TSOP
W24258-70LI
70/100
5V/3V
-40 to 85
600 mil DIP
W24258S-70LI
70/100
5V/3V
-40 to 85
330 mil SOP
W24258Q-70LI
70/100
5V/3V
-40 to 85
Standard type one TSOP
Notes:
1. Winbond reserves the right to make changes to its products without prior notice.
2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in applications
where personal injury might occur as a consequence of product failure.
Publication Release Date: November 1998
-7-
Revision A8