W24258 Datasheet, PDF (2/11 Pages) Winbond – 32K X 8 CMOS STATIC RAM

W24258
TRUTH TABLE
CS
OE
WE
H
X
X
L
H
H
L
L
H
L
X
L
MODE
Not Selected
Output Disable
Read
Write
I/O1−I/O8
High Z
High Z
Data Out
Data In
VDD CURRENT
ISB, ISB1
IDD
IDD
IDD
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
Supply Voltage to VSS Potential
Input/Output to VSS Potential
Allowable Power Dissipation
Storage Temperature
Operating Temperature
LE
LI
RATING
-0.5 to +7.0
-0.5 to VDD +0.5
1.0
-65 to +150
-20 to 85
-40 to 85
UNIT
V
V
W
°C
°C
°C
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
Operating Characteristics
(VDD = 5V ±10%; VDD = 3V ±10%; VSS = 0V; TA (°C) = -20 to 85 for LE; -40 to 85 for LI)
PARAMETER SYM. TEST CONDITIONS
5V ±10%
MIN. MAX.
Input Low Voltage VIL
-
-0.5 +0.8
Input High Voltage VIH
-
+2.2 VDD +0.5
Input Leakage
Current
ILI VIN = VSS to VDD
-1
+1
Output Leakage
Current
ILO VI/O = VSS to VDD,
CS = VIH (min.) or
OE = VIH (min.) or
WE = VIL (max.)
-1
+1
Output Low Voltage VOL IOL = +2.1 mA
-
0.4
Output High
Voltage
VOH IOH = -1.0 mA
2.4
-
3V ±10%
MIN. MAX.
-0.5 +0.6
+2.0 VDD +0.5
-1
+1
-1
+1
-
0.4
2.2
-
UNIT
V
V
µA
µA
V
V
-2-