W24100 Datasheet, PDF (7/11 Pages) Winbond – 128K X 8 CMOS STATIC RAM

Preliminary W24100
DATA RETENTION CHARACTERISTICS
(TA = 0° C to 70° C)
PARAMETER
SYM.
TEST CONDITIONS
VDD for Data Retention
VDR _{CS ≥ VDD -0.2V}
Data Retention Current
IDDDR _{CS ≥ VDD -0.2V, VDD = 3V}
Chip Deselect to Data
Retention Time
TCDR See data retention waveform
Operation Recovery Time TR
* Read Cycle Time
MIN. TYP. MAX. UNIT
2.0 -
-
V
-
-
50 µA
0
-
-
nS
TRC* -
-
nS
DATA RETENTION WAVEFORM
VDD
CS1
CS2
0.9 VDD
TCDR
VDR _=> 2V
CS ^>= VDD - 0.2V
0.9 VDD
TR
Publication Release Date: October 1999
-7-
Revision A1