W24100 Datasheet, PDF (2/11 Pages) Winbond – 128K X 8 CMOS STATIC RAM

Preliminary W24100
TRUTH TABLE
CS1 ^CS2 OE WE
H
X
X
X
X
L
X
X
L
H
H
H
L
H
L
H
L
H
X
L
MODE
Not Selected
Not Selected
Output Disable
Read
Write
I/O1− I/O8
High Z
High Z
High Z
Data Out
Data In
VDD CURRENT
ISB, ISB1
ISB, ISB1
IDD
IDD
IDD
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
Supply Voltage to VSS Potential
Input/Output to VSS Potential
Allowable Power Dissipation
Storage Temperature
Operating Temperature
RATING
-0.5 to +7.0
-0.5 to VDD +0.5
1.0
-65 to +150
0 to 70
UNIT
V
V
W
°C
°C
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
Operating Characteristics
(VDD = 5V ±10%; VSS = 0V; TA = 0° C to 70° C)
PARAMETER
SYM.
TEST CONDITIONS
MIN.
Input Low Voltage
VIL
-
-0.5
Input High Voltage
VIH
-
Input Leakage Current ILI VIN = VSS to VDD
+2.2
-1
Output Leakage
Current
ILO _{VI/O = VSS to VDD, CS1 = VIH}
-1
(min.) or ^OE = VIH (min.)
or ^WE = VIL (max.)
Output Low Voltage
VOL IOL = +2.1 mA
-
Output High Voltage
VOH IOH = -1.0 mA
2.4
Operating Power
Supply Current
IDD _{CS1 = VIL (max.) and}
-
CS2 = VIH (min.), I/O = 0 mA
Cycle = min., Duty = 100%
Standby Power Supply ISB _{CS = VIH (min.), Cycle = min.}
-
Current
Duty = 100%
ISB1 _{CS1 ≥ VDD -0.2V or}
CS2 ≤ 0.2V
LL
-
L
-
Note: Typical parameter is measured under ambient temperature TA = 25° C and VDD = 5V.
TYP.*
-
-
-
-
-
-
-
-
-
-
MAX.
+0.8
VDD +0.5
+1
+1
UNIT
V
V
µA
µA
0.4
V
-
V
70
mA
3
mA
50
µA
100
-2-