W24100 Datasheet, PDF (4/11 Pages) Winbond – 128K X 8 CMOS STATIC RAM

Preliminary W24100
AC Characteristics, continued
(VDD = 5V ±10%; VSS = 0V; TA = 0° C to 70° C)
Read Cycle
PARAMETER
SYM.
Read Cycle Time
TRC
Address Access Time
TAA
Chip Select Access Time
TACS
Output Enable to Output Valid
TAOE
Chip Selection to Output in Low Z
TCLZ*
Output Enable to Output in Low Z
TOLZ*
Chip Deselection to Output in High Z TCHZ*
Output Disable to Output in High Z
TOHZ*
Output Hold from Address Change
TOH
∗ These parameters are sampled but not 100% tested
W24100-70L
MIN. MAX.
70
-
-
70
-
70
-
35
10
-
5
-
-
30
-
30
10
-
W24100-70LL
MIN. MAX.
70
-
-
70
-
70
-
35
10
-
5
-
-
30
-
30
10
-
UNIT
nS
nS
nS
nS
nS
nS
nS
nS
nS
Write Cycle
PARAMETER
SYM.
Write Cycle Time
Chip Selection to End of Write
Address Valid to End of Write
Address Setup Time
Write Pulse Width
Write Recovery Time _{CS1, CS2, WE}
Data Valid to End of Write
Data Hold from End of Write
Write to Output in High Z
Output Disable to Output in High Z
Output Active from End of Write
∗ These parameters are sampled but not 100% tested
TWC
TCW
TAW
TAS
TWP
TWR
TDW
TDH
TWHZ*
TOHZ*
TOW
W24100-70L
MIN. MAX.
70
-
50
-
50
-
0
-
50
-
0
-
30
-
0
-
-
25
-
25
5
-
W24100-70LL
MIN. MAX.
70
-
50
-
50
-
0
-
50
-
0
-
30
-
0
-
-
25
-
25
5
-
UNIT
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
-4-