W25Q16DW_12 Datasheet, PDF (69/85 Pages) Winbond – 1.8V 16M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI

W25Q16DW
8. ELECTRICAL CHARACTERISTICS
8.1 Absolute Maximum Ratings ⁽¹⁾
PARAMETERS
SYMBOL
Supply Voltage
VCC
Voltage Applied to Any Pin
VIO
Transient Voltage on any Pin
VIOT
Storage Temperature
Lead Temperature
TSTG
TLEAD
Electrostatic Discharge Voltage VESD⁽³⁾
CONDITIONS
Relative to Ground
<20nS Transient
Relative to Ground
Human Body Model (HBM)
Machine Model (MM)
Charge Device model (CDM)
RANGE
–0.6 to VCC+0.6
–0.6 to VCC+0.6
–1.0V to
VCC+1.0V
–65 to +150
See Note ⁽²⁾
–2000 to +2000
–200 to +200
–750 to +750
UNIT
V
V
V
°C
°C
V
Notes:
1. This device has been designed and tested for the specified operation ranges. Proper operation outside
of these levels is not guaranteed. Exposure to absolute maximum ratings may affect device reliability.
Exposure beyond absolute maximum ratings may cause permanent damage.
2. Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and the
European directive on restrictions on hazardous substances (RoHS) 2002/95/EU.
3. ESD Test Condition:
HBM – JESD22-A114C.01
MM – EIA/JESD22-A115-A
CDM – JESD22-C101-C
8.2 Operating Ranges
PARAMETER
SYMBOL CONDITIONS
Supply Voltage⁽¹⁾
Ambient Temperature,
Operating
VCC
TA
F_R = 80MHz,
F_R = 104MHz,
Industrial
fR = 50MHz
fR = 50MHz
SPEC
MIN MAX
1.65
1.7
1.95
–40 +85
UNIT
V
°C
Note:
1. VCC voltage during Read can operate across the min and max range but should not exceed ±10% of
the programming (erase/write) voltage.
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Publication Release Date: September 06, 2012
Revision F