W25Q40BW_13 Datasheet, PDF (59/73 Pages) Winbond – 1.8V 4M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI

W25Q40BW
9.4 DC Electrical Characteristics
PARAMETER
Input Capacitance
Output Capacitance
SYMBOL CONDITIONS
CIN(1)
Cout⁽¹⁾
VIN = 0V⁽¹⁾
VOUT = 0V⁽¹⁾
SPEC
MIN
TYP
MAX
6
8
Input Leakage
ILI
±2
I/O Leakage
ILO
±2
Standby Current
ICC1
/CS = VCC,
VIN = GND or VCC
25
50
Power-down Current
ICC2
/CS = VCC,
VIN = GND or VCC
5
10
Current Read Data /
Dual /Quad 1MHz
ICC3⁽²⁾
C = 0.1 VCC / 0.9 VCC
DO = Open
4/5/6
6/10/12
Current Read Data /
Dual /Quad 33MHz
ICC3⁽²⁾
C = 0.1 VCC / 0.9 VCC
DO = Open
6/8/9
9/12/15
Current Read Data /
Dual Output Read/Quad ICC3⁽²⁾
Output Read 80MHz
C = 0.1 VCC / 0.9 VCC
DO = Open
10/10/12 15/20/24
Current Write Status
Register
ICC4
/CS = VCC
15
20
Current Page Program ICC5
/CS = VCC
20
25
Current Sector/Block
Erase
ICC6
/CS = VCC
20
25
Current Chip Erase
ICC7
/CS = VCC
20
25
Input Low Voltage
VIL
–0.5
VCC x 0.3
Input High Voltage
VIH
VCC x 0.7
VCC + 0.4
Output Low Voltage
VOL
IOL = 100 µA
0.2
Output High Voltage
VOH
IOH = –100 µA
VCC – 0.2
Notes:
1. Tested on sample basis and specified through design and characterization data. TA = 25° C, VCC = 1.8V.
2. Checker Board Pattern.
UNIT
pF
pF
µA
µA
µA
µA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
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Publication Release Date: October 11, 2013
Revision F