W25Q40BW_13 Datasheet, PDF (58/73 Pages) Winbond – 1.8V 4M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI

W25Q40BW
9.3 Power-Up Power-Down Timing and Requirements
Parameter
VCC (min) to /CS Low
Time Delay Before Write Instruction
Write Inhibit Threshold Voltage
Symbol
tVSL⁽¹⁾
tPUW⁽¹⁾
VWI⁽¹⁾
spec
MIN
10
1
1.0
MAX
10
1.4
Note:
1. These parameters are characterized only.
VCC
VCC (max)
Program, Erase and Write Instructions are ignored
/CS must track VCC
VCC (min)
VWI
Reset
State
tVSL
Read Instructions
Allowed
tPUW
Device is fully
Accessible
Unit
µs
ms
V
VCC
Figure 37a. Power-up Timing and Voltage Levels
/CS must track VCC
during VCC Ramp Up/Down
Time
/CS
Figure 37b. Power-up, Power-Down Requirement
Time
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