W9464G6IB Datasheet, PDF (5/51 Pages) Winbond – 1M × 4 BANKS × 16 BITS DDR SDRAM

W9464G6IB
3. KEY PARAMETERS
SYMBOL
DESCRIPTION
CL = 2
tCK
Clock Cycle Time
CL = 2.5
CL = 3
tRAS
tRC
IDD0
IDD1
IDD2F
IDD2Q
IDD4R
IDD4W
IDD5
IDD6
Active to Precharge Command Period
Active to Ref/Active Command Period
Operating Current: One Bank Active-Precharge
Operating Current: One Bank Active-Read-Precharge
Precharge floating standby current
Precharge quiet standby current
Burst Operation Read Current
Burst Operation Write Current
Auto Refresh Current
Self Refresh Current
MIN./MAX.
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Min.
Max.
Max.
Max.
Max.
Max.
Max.
Max.
Max.
-5
7.5 nS
10 nS
6 nS
10 nS
5 nS
10 nS
40 nS
55 nS
120 mA
140 mA
50 mA
50 mA
185 mA
180 mA
210 mA
2.5 mA
Publication Release Date:Oct. 16, 2008
-5-
Revision A01