W19B320BT Datasheet, PDF (43/56 Pages) Winbond – 2.7~3.6-volt write (program and erase) operations

W19B320BT/B DATASHEET
8.10 Erase and Program Operation
PARAMETER
SYM.
MIN.
70ns
TYP.
Write Cycle Timing (Note 1)
TWC
70
-
Address setup Time
TAS
0
-
Address Setup Timing to #OE low during toggle bit
polling
TASO
15
-
Address Hold Time
TAH
45
-
Address Hold Time From #CE or #OE high during
toggle bit polling
TAHT
0
-
Data Setup Time
TDS
35
-
Data Hold Time
Output Enable High During toggle bit polling
TDH
0
-
TOEPH
20
-
Read Recovery Time Before Write (#OE High to
#WE Low)
TGHWL
0
-
#CE Setup Time
TCS
0
-
#CE HOLD Time
TCH
0
-
Write Pulse Width
Write Pulse Width High
TWP
30
-
TWPH
30
-
Latency Between Read and Write Operation
TSR/W
0
-
Programming Time (Note 2)
Byte
TPB
-
7
Word
TPW
-
9
Accelerated Programming Time
(Noe2)
Byte
Word
TACCP
4
Sector Erase Time (Note 2)
TSE
-
0.4
VDD Setup Time (Note 1)
TVCS
50
-
Write Recovery Time from RY/#BY
TRB
0
-
Program/Erase Valid to RY/#BY Delay
TBUSY
90
-
Notes:
1. Not 100 % tested
2. See the “Alternate #CE Controlled Erase and Program Operations“ section for more information
MAX.
-
-
-
UNIT
ns
ns
ns
-
ns
-
ns
-
ns
-
ns
-
ns
-
ns
-
ns
-
ns
-
ns
-
ns
-
ns
150
μs
210
μs
-
μs
-
sec
-
μs
-
ns
-
ns
8.11 Temporary Sector Unprotect
PARAMETER
VID Rise and Fall Time
VHH Rise and Fall Time
#RESET Setup Time for Temporary Sector Unprotect
#RESET Hold Time from RY/#BY High for Temporary
Sector Unprotect
Note: Not 100 % tested
- 43 -
SYM.
TVIDR
TVHH
TRSP
TRRB
MIN.
500
250
4
4
MAX.
-
-
-
-
UNIT
ns
ns
μs
μs
Publication Release Date:Dec. 25, 2007
Revisionv A3