W25X40BL Datasheet, PDF (42/55 Pages) Winbond – 2.5V 4M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI

W25X40BL
AC Electrical Characteristics (2.3~3.6V) (cont’d)
DESCRIPTION
/HOLD Active Setup Time relative to CLK
/HOLD Active Hold Time relative to CLK
/HOLD Not Active Setup Time relative to CLK
/HOLD Not Active Hold Time relative to CLK
/HOLD to Output Low-Z
/HOLD to Output High-Z
Write Protect Setup Time Before /CS Low
Write Protect Hold Time After /CS High
/CS High to Power-down Mode
/CS High to Standby Mode without Electronic
Signature Read
/CS High to Standby Mode with Electronic
Signature Read
Write Status Register Time
Byte Program Time (First Byte) ⁽⁴⁾
Additional Byte Program Time (After First Byte)
(4)
SYMBOL
tHLCH
tCHHH
tHHCH
tCHHL
tHHQX⁽²⁾
tHLQZ⁽²⁾
tWHSL⁽³⁾
tSHWL⁽³⁾
tDP⁽²⁾
tRES1⁽²⁾
ALT
tLZ
tHZ
MIN
5
5
5
5
20
100
SPEC
TYP MAX
7
12
3
3
tRES2⁽²⁾
1.8
tW
10
15
t_BP1
30
50
t_BP2
2.5
12
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
ms
µs
µs
Page Program Time
Sector Erase Time (4KB)
Block Erase Time (32KB)
Block Erase Time (64KB)
Chip Erase Time
tPP
1
3
ms
tSE
50 200/400⁽⁵⁾ ms
tBE₁
180
800
ms
tBE₂
200 1,000 ms
tCE
1.5
4
s
Notes:
1.
2.
3.
4.
5.
Clock high + Clock low must be less than or equal to 1/fC.
Value guaranteed by design and/or characterization, not 100% tested in production.
Only applicable as a constraint for a Write Status Register instruction when SRP is set to 1.
For multiple bytes after first byte within a page, t_BPN = t_{BP1 +} t_{BP2 * N} (typical) and t_BPN = t_{BP1 +} t_{BP2 * N} (max), where
N = number of bytes programmed.
Max Value t_SE with <50K cycles is 200ms and >50K & <100K cycles is 400ms.
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