W29GL032C_13 Datasheet, PDF (38/68 Pages) Winbond – 32M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE

W29GL032C
8.5 AC Characteristics
Description
Symbol
VCC=2.7V~3.6V
ALT STD Min Typ Max Units
Valid Data Output after Address
EVIO=VCC
EVIO=1.65V to VCC⁽¹⁾
tACC tAA
70 ns
80 ns
Page Access Time
EVIO=VCC
EVIO=1.65V to VCC⁽¹⁾
tPACC tPA
25 ns
35 ns
Valid data output after #CE low
EVIO=VCC
EVIO=1.65V to VCC⁽¹⁾
tCE
70 ns
80 ns
Valid data output after #OE low
EVIO=VCC
EVIO=1.65V to VCC⁽¹⁾
tOE
25 ns
35 ns
Read Period Time
EVIO=VCC
EVIO=1.65V to VCC⁽¹⁾
tRC 70
80
ns
ns
Data Output High Impedance after #OE high
tDF
20 ns
Data Output High Impedance after #CE high
tDF
20 ns
Output Hold Time from the earliest rising edge of
address, #CE, #OE
tOH 0
ns
Write Period Time
tWC 70
ns
Command write period time
tCWC 70
ns
Address Setup Time
tAS 0
ns
Address Setup Time to #OE low during Toggle Bit
Polling
tASO 15
ns
Address Hold Time
tAH 45
ns
Address Hold Time from #CE or #OE High during Toggle
Bit Polling
tAHT 0
ns
Data Setup Time
tDS 30
ns
Data Hold Time
tDH 0
ns
VCC Setup Time
tVCS 35
µs
Chip enable Setup Time
tCS 0
ns
Chip enable Hold Time
tCH 0
ns
Output enable Setup Time
tOES 0
ns
Output enable Hold Time
Read
Toggle & Data# Polling
tOEH 0
10
ns
ns
#WE Setup Time
tWS 0
ns
#WE Hold Time
tWH 0
ns
#CE Pulse Width
tCP tCEPW 35
ns
#CE Pulse With High
tCPH tCEPWH 30
ns
#WE Pulse Width
tWP tWEPW 35
ns
#WE Pulse Width High
tWPH tWEPWH 30
ns
Program/Erase active time by EVIO=VCC
RY/#BY
EVIO=1.65V to VCC
tBUSY
70 ns
80 ns
Read Recover Time before Write (#OE High to #WE
Low)
tGHWL 0
ns
Read Recover Time before Write (#OE High to #CE Low)
tGHEL 0
ns
16-Word Write Buffer Program Operation
tWHWH1
96
µs
Effective Write Buffer Program
Operation
Word
tWHWH1
6
µs
Accelerated Effective Write
Buffer Operation
Per Word
tWHWH1
4.8
µs
Program Operation
Byte
tWHWH1
6 200 µs
Program Operation
Word
tWHWH1
6 200 µs
32