W25X10_07 Datasheet, PDF (38/48 Pages) Winbond – 1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI

W25X10, W25X20, W25X40, W25X80
11.9 AC Electrical Characteristics (Fast Read 40MHz, cont’d)⁽⁵⁾
DESCRIPTION
SYMBOL ALT
MIN
Write Protect Setup Time Before /CS Low
tWHSL⁽³⁾
20
Write Protect Hold Time After /CS High
tSHWL⁽³⁾
100
/CS High to Power-down Mode
tDP⁽²⁾
/CS High to Standby Mode without Electronic
Signature Read
tRES1⁽²⁾
/CS High to Standby Mode with Electronic
Signature Read
tRES2⁽²⁾
Write Status Register Time
tW
Byte Program Time (First Byte) ⁽⁴⁾
t_BP1
Additional Byte Program Time (After First Byte) ⁽⁴⁾
t_BP2
Page Program Time
tPP
Sector Erase Time (4KB)
tSE
Block Erase Time (64KB)
tBE
Chip Erase Time W25X10 / W25X20
tCE
Chip Erase Time W25X40
Chip Erase Time W25X80
SPEC
TYP
MAX
3
3
1.8
10
15
100
150
6
12
1.5
3
150 300
1
2
3
6
5
10
10
20
UNIT
ns
ns
µs
µs
µs
ms
µs
µs
ms
ms
s
s
s
s
Notes:
1.
2.
3.
4.
5.
Clock high + Clock low must be less than or equal to 1/fC.
Value guaranteed by design and/or characterization, not 100% tested in production.
Only applicable as a constraint for a Write Status Register instruction when Sector Protect Bit is set to 1.
For multiple bytes after first byte within a page, t_BPN = t_{BP1 +} t_{BP2 * N} (typical) and t_BPN = t_{BP1 +} t_{BP2 * N} (max), where N
= number of bytes programmed. tBP1 (typical) is also the recommended delay time before reading the status register
after issuing a program page instruction.
The AC Electrical Characteristics (Fast Read 40MHz) is provided for convenience when using a 40MHz clock or for
comparing 25X AC specifications with other 40MHz Serial Flash devices.
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