W25X10_07 Datasheet, PDF (36/48 Pages) Winbond – 1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI

W25X10, W25X20, W25X40, W25X80
11.8 AC Electrical Characteristics (Fast Read 75MHz, cont’d)
DESCRIPTION
SYMBOL ALT
MIN
SPEC
TYP
MAX
UNIT
/HOLD Active Setup Time relative to CLK
tHLCH
5
ns
/HOLD Active Hold Time relative to CLK
tCHHH
5
ns
/HOLD Not Active Setup Time relative to CLK
tHHCH
5
ns
/HOLD Not Active Hold Time relative to CLK
tCHHL
5
ns
/HOLD to Output Low-Z
tHHQX⁽²⁾
tLZ
7
ns
/HOLD to Output High-Z
tHLQZ⁽²⁾
tHZ
12
ns
Write Protect Setup Time Before /CS Low
tWHSL⁽³⁾
20
ns
Write Protect Hold Time After /CS High
tSHWL⁽³⁾
100
ns
/CS High to Power-down Mode
tDP⁽²⁾
3
µs
/CS High to Standby Mode without Electronic
Signature Read
tRES1⁽²⁾
3
µs
/CS High to Standby Mode with Electronic
Signature Read
tRES2⁽²⁾
1.8
µs
Write Status Register Time
tW
10
15
ms
Byte Program Time (First Byte) ⁽⁵⁾
t_BP1
Additional Byte Program Time (After First Byte) ⁽⁵⁾
t_BP2
Page Program Time
tPP
100
150
µs
6
12
µs
1.5
3
ms
Sector Erase Time (4KB)
tSE
150
300
ms
Block Erase Time (64KB)
tBE
1
2
s
Chip Erase Time W25X10 / W25X20
tCE
Chip Erase Time W25X40
Chip Erase Time W25X80
3
6
s
5
10
s
10
20
s
Notes:
1.
2.
3.
4.
5.
Clock high + Clock low must be less than or equal to 1/fC.
Value guaranteed by design and/or characterization, not 100% tested in production.
Only applicable as a constraint for a Write Status Register instruction when Sector Protect Bit is set to 1.
Commercial temperature only applies to Fast Read (F_R0 & F_R1). Industrial temperature applies to all other parameters.
For multiple bytes after first byte within a page, t_BPN = t_{BP1 +} t_{BP2 * N} (typical) and t_BPN = t_{BP1 +} t_{BP2 * N} (max), where N
= number of bytes programmed. t_BP1 (typical) is also the recommended delay time before reading the status register
after issuing a page program instruction.
- 36 -