W25X64V Datasheet, PDF (37/44 Pages) Winbond – 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI

W25X64
11.7 AC Electrical Characteristics (cont’d)
DESCRIPTION
SYMBOL ALT
MIN
SPEC
TYP
MAX
UNIT
/HOLD Active Setup Time relative to CLK
tHLCH
5
ns
/HOLD Active Hold Time relative to CLK
tCHHH
5
ns
/HOLD Not Active Setup Time relative to CLK
tHHCH
5
ns
/HOLD Not Active Hold Time relative to CLK
tCHHL
5
ns
/HOLD to Output Low-Z
tHHQX⁽²⁾
tLZ
7
ns
/HOLD to Output High-Z
tHLQZ⁽²⁾ tHZ
12
ns
Write Protect Setup Time Before /CS Low
tWHSL⁽³⁾
20
ns
Write Protect Hold Time After /CS High
tSHWL⁽³⁾
100
ns
/CS High to Power-down Mode
tDP⁽²⁾
3
µs
/CS High to Standby Mode without Electronic
Signature Read
tRES1⁽²⁾
3
µs
/CS High to Standby Mode with Electronic
Signature Read
tRES2⁽²⁾
1.8
µs
Write Status Register Time
tW
10
15
ms
Byte Program Time (First Byte) ⁽⁴⁾
t_BP1
Additional Byte Program Time (After First Byte) ⁽⁴⁾
t_BP2
Page Program Time
tPP
30
50
µs
6
12
µs
1.6
3
ms
Sector Erase Time (4KB)
tSE
150
300
ms
Block Erase Time (64KB)
tBE
.8
2
s
Chip Erase Time W25X64
tCE
25
40
s
Note s :
1.
2.
3.
4.
Clock high + Clock low must be less than or equal to 1/fC.
Value guaranteed by design and/or characterization, not 100% tested in production.
Only applicable as a constraint for a Write Status Register instruction w hen Sector Protect Bit is set to 1.
For multiple bytes after first byte w ithin a page, t_BPN = t_{BP1 +} t_{BP2 * N} (typical) and t_BPN = t_{BP1 +} t_{BP2 * N} (max), w here N
= number of bytes programmed.
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Publication Release Date: December 19, 2008
Revision A